Fabrication and I-V Characteristics of High-Tc Nb3Ge Microbridges
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (1A) , L10
- https://doi.org/10.1143/jjap.21.l10
Abstract
High-T c Nb3Ge microbridges are fabricated by electron-beam lithography combined with CF4 reactive sputter etching. The bridges are 0.48 µm wide and 0.36–0.6 µm long. The temperature dependence of I c is found to be proportional to (1-t)5/2 at t>0.8 (t=T/T c). This result means that the bridge region behaves like an inhomogeneous type-II superconductor film. 9.75 GHz microwave induced steps are observed throughout a wide temperature range. The steps are observed above 20 K in some bridges.Keywords
This publication has 7 references indexed in Scilit:
- A New High Resolution Negative Electron Resist Chloromethylated Poly-α-Methylstyrene (αM-CMS)Japanese Journal of Applied Physics, 1981
- Josephson effects in ultrashort mean-free-path superconductorsApplied Physics Letters, 1981
- Superconducting weak linksReviews of Modern Physics, 1979
- Critical currents of superconducting microbridgesPhysical Review B, 1976
- Fabrication and Josephson properties of Nb3GeIEEE Transactions on Magnetics, 1975
- Observation of the Josephson effect in Nb3Ge dayem bridgesIEEE Transactions on Magnetics, 1975
- Self-heating hotspots in superconducting thin-film microbridgesJournal of Applied Physics, 1974