Frequency response and differential gain in strained and unstrained InGaAs/InGaAsP quantum well lasers
- 4 July 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (14) , 1278-1280
- https://doi.org/10.1049/el:19910801
Abstract
A systematic investigation is presented into the frequency response and differential gain in both strained and unstrained InGaAs/lnGaAsP 1.5 μm quantum well lasers. Both the differential gain and damping in strained devices were found to be similar in magnitude to comparable unstrained devices. In addition, the differential gain was found to increase and the damping to decrease with increasing numbers of quantum wells.Keywords
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