EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC

• 1 April 2002
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 389-393, 497-500
• https://doi.org/10.4028/www.scientific.net/msf.389-393.497

Abstract

Keywords

• DEFECT
• ESR
• SINGLE SILICON VACANCY
• SPIN TRIPLET GROUND STATE
• VACANCY