Temperature change of the conductivity type in semi-insulating InP double doped with Zn and Fe

1 March 2000

journal article
Published by IOP Publishing in Semiconductor Science and Technology

Vol. 15 (3) , 297-300
https://doi.org/10.1088/0268-1242/15/3/313

Abstract

Semi-insulating InP single crystals double doped with Zn and Fe and single doped with Fe were grown by the Czochralski technique. Resistivity and Hall coefficient were measured at temperatures between 230 K and 420 K. The Hall coefficient shows an extremum at about 250 K and a change of sign to positive below about 235 K in InP:(Zn+Fe). The effect is discussed in terms of the strength of electron and hole mixed conductance at various temperatures on account of a shift of the Fe deep level with temperature.

Keywords

SINGLE CRYSTAL

This publication has 1 reference indexed in Scilit:

On the Temperature Dependence of the Intrinsic Concentration in Semi-Insulating InP Determined from Galvanomagnetic Measurements
Physica Status Solidi (a), 1993