Wide-wavelength and low-dark-current lattice-mismatched GaInAs photodiodes

9 April 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (8) , 747-749
https://doi.org/10.1049/el:19920473

Abstract

A lattice-mismatched GaInAs photodiode with low dark current and very wide-wavelength spectral response has been fabricated on InP substrate. The uses of a lattice-mismatched GaInAs light-absorbing layer and a very thin InP cap layer provide extended responsivity for longer and shorter wavelengths, respectively. To improve the crystal quality of the lattice-mismatched GaInAs layer a strained-superlattice buffer layer was used, with a combined thermal cycle annealing process, resulting in a low dark current. The shallow pn junction of the photodiode was formed by a newly developed Zn diffusion technique.

Keywords

GAINAS:ZN-INP
LATTICE-MISMATCHED
WIDE-WAVELENGTH SPECTRAL RESPONSE
ZN DIFFUSION TECHNIQUE
INP SUBSTRATE
LOW-DARK-CURRENT
PHOTODIODES
SHALLOW P-N JUNCTION
LIGHT-ABSORBING LAYER
INP CAP LAYER
STRAINED-SUPERLATTICE BUFFER LAYER
THERMAL CYCLE ANNEALING PROCESS

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