Charge Simulation Method with Complex Fictitious Charges for Calculating Capacitive-Resistive Fields
- 1 November 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Apparatus and Systems
- Vol. PAS-100 (11) , 4665-4672
- https://doi.org/10.1109/tpas.1981.316809
Abstract
This paper describes a numerical method for calculating electric fields very accurately in configurations including voluime resistance or surface resistance. The principle of the method is to incorporate the field effect of the true charge caused by conductivity in that of complex fictitious charges by the charge simulation method (CSM). CSM with complex charges for computing multi-phase AC fields is also described with a calculated example. Results are given for comparison with analytical expressions and for a disc-type gas insulation spacer having either volume resistance or surface resistance.Keywords
This publication has 5 references indexed in Scilit:
- Calculation of Complex Fields in Conducting MediaIEEE Transactions on Electrical Insulation, 1980
- Electrostatic and Electromagnetic Field Computation for the H.V. Resistive Divider DesignIEEE Transactions on Power Apparatus and Systems, 1979
- Finite element solution of complex potential electric fieldsIEEE Transactions on Power Apparatus and Systems, 1977
- A Charge Simulation Method for the Calculation of High Voltage FieldsIEEE Transactions on Power Apparatus and Systems, 1974
- Consideration of the effect of pollution on the potential distribution of insulator systemsProceedings of the Institution of Electrical Engineers, 1968