Subpicosecond luminescence study of carrier transfer in InGaAs/InP multiple quantum wells
- 31 December 1990
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 7 (4) , 345-348
- https://doi.org/10.1016/0749-6036(90)90223-t
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Capture of electrons and holes in quantum wellsApplied Physics Letters, 1988
- Optical time-of-flight measurement of carrier diffusion and trapping in an InGaAs/InP heterostructureApplied Physics Letters, 1987
- Effective-mass eigenfunctions in superlattices and their role in well-captureSuperlattices and Microstructures, 1986
- Resonant carrier capture by semiconductor quantum wellsPhysical Review B, 1986