Variation of Mobility with Electric Field in Nondegenerate Semiconductors

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Abstract
In a recent communication Sclar has discussed the nature of ionized-impurity scattering when the product of the carrier wave number and the distance at which the scattering potential is cut off is much less than unity. Sclar has studied the mobility under these conditions but has neglected the influence of lattice scattering and electric field. In this communication the author has studied the variation of mobility with electric field, taking lattice scattering into account.

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