Megahertz linewidth from a 1.5 μm semiconductor laser with HeNe laser injection
- 1 April 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (7) , 292-293
- https://doi.org/10.1049/el:19820199
Abstract
The linewidth of a 1.5 μm semiconductor laser has been reduced from > 1 GHz to < 1.5 MHz by injection locking the laser to the low-power narrow-linewidth output from an HeNe laser operating at 1.523 μm. A collimated-beam power of 750 μW was obtained in the injection-locked semiconductor laser mode.Keywords
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