Effect of oxide-layer thickness on the speed of m.n.o.s. transistors
- 25 February 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (4) , 89-90
- https://doi.org/10.1049/el:19710061
Abstract
The electrical characteristics of m.n.o.s. transistors are described. Conditions are proposed for the measurement of the speed, or rate of change of threshold voltage, so that different types may be compared Results are presented to show that the speed increases exponentially as the thickness of the oxide layer is reduced in the range 10–25 Å.Keywords
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