D.L.T.S. measurements of a germanium M-I-S interface
- 1 May 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (3) , 571-589
- https://doi.org/10.1007/bf02654592
Abstract
No abstract availableKeywords
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- Relationships of the Chemical and Electrical Interfacial Properties of Germanium ‐ SiO2 SystemsJournal of the Electrochemical Society, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Investigation of long-term processes on a real germanium surfaceSurface Science, 1971
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966