Epitaxial growth of metallic ErP, ErSb and lattice-matched ErP x Sb 1−x layers on (001)InP and (001)GaAs
- 3 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (16) , 1050-1052
- https://doi.org/10.1049/el:19890702
Abstract
ErP and ErSb compounds have been demonstrated to have metallic behaviour (ρErP = 150 µΩcm; ρErSb = 60 µΩcm). We show that they can be epitaxially grown on InP and GaAs in an MBE system and that many matched systems (metallic layer)/(III-V semiconductor) can be built using ternary compounds of rare-earth and V elements.Keywords
This publication has 1 reference indexed in Scilit:
- Chapter 33 Rare earth pnictidesPublished by Elsevier ,1979