InP/InGaAsP avalanche photodiodes with new guard ring structure
- 28 August 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (18) , 716-717
- https://doi.org/10.1049/el:19800508
Abstract
A new guard ring structure for InP/InGaAsP avalanche photodiodes is described, which makes use of the impurity concentration difference between two InP epitaxial layers. The guard ring effect gives a low dark current and uniform multiplication characteristics at λ = 1.29 μm.Keywords
This publication has 1 reference indexed in Scilit:
- A proposal on optical fibre transmission systems in a low-loss 1.0?1.4 ?m wavelength regionOptical and Quantum Electronics, 1977