Dc Hall effect measurements on ttf-tcnq

Abstract
Some DC Hall effect measurements have been made on single crystals of TTF-TCNQ in the metallic region, at atmospheric pressure and under pressure of 6 kbars. For the field orientation employed here (H parallel to the crystalline a axis) the average value of the low field Hall coefficient is — 4.2 ± 0.6 x 10-11 Vcm/AG at room temperature which is approximately consistent with other estimates of the electron density. The influence of the electrical contacts is discussed in detail and the temperature dependence of RH is compared with previous work on HMTSF-TCNQ