Effect of wafer cleavage on composition of InGaAsP grown on InP by low pressure MOCVD
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 221-225
- https://doi.org/10.1016/0022-0248(91)90460-m
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Bandgap and lattice constant of GaInAsP as a function of alloy compositionJournal of Electronic Materials, 1974