Interdiffusion in copper–aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation
- 1 December 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (12) , 6923-6928
- https://doi.org/10.1063/1.331999
Abstract
Interdiffusion in Cu–Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing-incidence x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with θ-CuAl2 forming first, followed by η2-CuAl, and γ2-Cu9Al4. In samples with excess Al, the θ-CuAl2 is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of θ-CuAl2 can be described by a prefactor of 7.4 cm2/s and an activation energy of 1.31 eV.This publication has 12 references indexed in Scilit:
- A simple analysis of inert marker motion in a single compound layer for solid-phase epitaxy and for binary diffusion couplesJournal of Applied Physics, 1982
- An in situ X-ray study of phase formation in CuAl thin film couplesThin Solid Films, 1982
- Metallization for very-large-scale integrated circuitsThin Solid Films, 1982
- Growth kinetics of planar binary diffusion couples: ’’Thin-film case’’ versus ’’bulk cases’’Journal of Applied Physics, 1982
- A transmission electron microscopy study of intermetallic formation in aluminium-copper thin-film couplesJournal of Crystal Growth, 1980
- Growth kinetics of the θ phase in AlCu thin film bilayersThin Solid Films, 1978
- Investigation of diffusion in the CuAl thin film systemThin Solid Films, 1977
- Structure and growth kinetics of Ni2Si on siliconThin Solid Films, 1975
- Analysis of grain boundary diffusion in bimetallic thin film structures using Auger electron spectroscopyJournal of Vacuum Science and Technology, 1975
- Interdiffusion in the Al–Cu SystemTransactions of the Japan Institute of Metals, 1971