Dislocation Scattering in GaN

8 February 1999

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 82 (6) , 1237-1240
https://doi.org/10.1103/physrevlett.82.1237

Abstract

A theory of charged-dislocation-line scattering is developed within the framework of the Boltzmann transport equation. A fit of the theory to temperature-dependent Hall-effect data in GaN gives dislocation densities which are in excellent agreement with those measured by transmission electron microscopy. This work shows that threading edge dislocations in GaN indeed are electrically active, in agreement with recent theoretical predictions.

Keywords

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