Defect-Free Reactive Ion Etching of Silicon by SiF4/Cl2 Plasma
- 1 June 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (6R)
- https://doi.org/10.1143/jjap.22.963
Abstract
Defect-free reactive ion etching (RIE) of silicon has been carried out using a mixture of SiF4 and Cl2 as the etching gas. The etching mechanism is investigated with a quadrupole mass spectrometer and the main reaction products are found to be Si2F6 or SiF3 for the Si etching and Si2F6O for the SiO2 etching. The deposition of (SiF2) n which occurs during the etching of silicon can be prevented by adding Cl2 gas to the SiF4. A defect-free Si surface, characterized by deep-level transient spectroscopy (DLTS), is obtained by RIE using a mixture of SiF4 (70%) and Cl2 (30%) at a pressure of 7.0 Pa with an rf power density of 0.24 W/cm2.Keywords
This publication has 4 references indexed in Scilit:
- RIE Contamination of Etched Silicon SurfacesJournal of the Electrochemical Society, 1982
- Metal-containing plasma polymerized fluorocarbon films—their synthesis, structure, and polymerization mechanismJournal of Vacuum Science and Technology, 1979
- Ion-surface interactions in plasma etchingJournal of Applied Physics, 1977
- Silicon-Fluorine Chemistry. I. Silicon Difluoride and the Perfluorosilanes1Journal of the American Chemical Society, 1965