Discrimination between 1/f noise models in junctions field effect transistors and metal-oxide-semiconductor field effect transistors: Numerical results
- 1 June 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (6) , 4300-4304
- https://doi.org/10.1063/1.329242
Abstract
The integrals given by Park et al. in an earlier paper [J. Appl. Phys. 52, 296 (1981)] on 1/f noise are expressed in closed forms and evaluated numerically. The results show how the field dependent mobility affects the number fluctuation model and how the field dependent mobility and the field dependence of Hooge’s parameter α affects the mobility fluctuation model. The latter effect is very strong and results in a large decrease in the noise spectrum at larger values of drain bias, when compared with the elementary theory that neglects these field dependences. For relatively short channels the mobility fluctuation model gives a peak in the noise well before saturation, in agreement with the experiments of Park et al. The effects of the field dependent mobility and of the field dependent α on the noise resistance at saturation are evaluated numerically.This publication has 3 references indexed in Scilit:
- Discrimination between two noise models in metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 1981
- Flicker noise of hot electrons in silicon at T = 78 KPhysics Letters A, 1980
- Flicker noise in semiconductors: Not a true bulk effectApplied Physics Letters, 1978