Azafullerene (C59N)2 thin-film field-effect transistors

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Abstract
Thin-filmfield-effect transistors(FETs) of azafullerene ( C 59 N ) 2 are fabricated, and their properties are investigated. The ( C 59 N ) 2 FET exhibits n-channel characteristics with the field-effect electron mobility of 3.8×10 −4 cm 2 V −1 s −1 and the on–off current ratio of 10 3 at room temperature. The observed differences are ascribed to the much smaller grain size and the worse crystallinity of ( C 59 N ) 2 thin films, on a basis of low angle x-ray diffractionstructural data. The anticipated dimer to monomer conversion with electron carrier injection is not observed. The FETcharacteristics are discussed from the temperature evolution of the mobilities between ( C 59 N ) 2 and C 60 FETs.