Interaction kinetics of As2 and Ga on {100} GaAs surfaces
- 1 April 1977
- journal article
- Published by Elsevier in Surface Science
- Vol. 64 (1) , 293-304
- https://doi.org/10.1016/0039-6028(77)90273-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Instrument response function of a quadrupole mass spectrometer used in time-of-flight measurementsInternational Journal of Mass Spectrometry and Ion Physics, 1976
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Velocity distributions of As2 and As4 scattered from GaAsJournal of Vacuum Science and Technology, 1975
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurementsSurface Science, 1974
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- The Growth of a GaAs–GaAlAs SuperlatticeJournal of Vacuum Science and Technology, 1973
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970
- Interaction of Ga and As2 Molecular Beams with GaAs SurfacesJournal of Applied Physics, 1968