Cryoelectric Content-Addressable Memories using Flux-Shuttling Nondestructive Readout
- 1 May 1968
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (6) , 2579-2585
- https://doi.org/10.1063/1.1656620
Abstract
The feasibility of large capacity content addressable memories (CAMs) using the flux-shuttling non-destructive readout (NDRO) technique and designed to handle the multiple response problem is investigated in this paper. A 4×4 CAM incorporating flux-shuttling cells and crossed-film cryotron logic circuitry was designed, fabricated, and tested. On the basis of the results of the tests performed, a highly efficient CAM was designed. The ultimate performance limits of the type of CAM designed are considered.This publication has 2 references indexed in Scilit:
- Design of a fully associative cryogenic data processorIEEE Transactions on Magnetics, 1965
- Associative Memory with Ordered RetrievalIBM Journal of Research and Development, 1962