Field effect studies of the oxidized silicon surface
- 1 March 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (3) , 225-235
- https://doi.org/10.1016/0038-1101(66)90107-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Heterojunction properties of the oxidised semiconductorSolid-State Electronics, 1965
- Electrical properties of cleaved germanium surfacesJournal of Physics and Chemistry of Solids, 1960
- Surface measurements on freshly cleaved silicon p-n junctionsJournal of Physics and Chemistry of Solids, 1960
- Work Function and Sorption Properties of Silicon CrystalsJournal of Applied Physics, 1958