A High Pressure Hexagonal Form of MgSiO3
- 1 January 1974
- journal article
- Published by Japan Academy in Proceedings of the Japan Academy
- Vol. 50 (5-6) , 378-380
- https://doi.org/10.2183/pjab1945.50.378
Abstract
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This publication has 3 references indexed in Scilit:
- Semiconductor-to-metal transition in GaP under high pressureSolid State Communications, 1974
- A New Device for Pressure VesselsProceedings of the Japan Academy, 1973
- High Pressure Break-down of EnstatiteProceedings of the Japan Academy, 1972