Small-Angle-Scattering Evidence of Voids in Hydrogenated Amorphous Silicon
- 15 October 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 43 (16) , 1161-1163
- https://doi.org/10.1103/physrevlett.43.1161
Abstract
The observation of extensive small-angle x-ray scattering from hydrogenated -Si indicates that the void distribution in this material is very similar to that for evaporated -Si. Thus the improved electrical properties of the hydrogenated material are not due to this material having a homogeneous structure.
Keywords
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