Transverse structures in resonatorless absorptive switching in bulk ZnSe
- 15 March 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (6) , 3013-3017
- https://doi.org/10.1063/1.353006
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Optical Bistability and Formation of Localized and Moving High Absorption Domains in ZnSe and ZnCdSPhysica Status Solidi (b), 1988
- Optical bistability and effect of output signal pulsations due to increasing absorption in bulk ZnSeOptics Communications, 1988
- Band-edge nonlinearities in direct-gap semiconductors and their application to optical bistability and optical computingJournal of Applied Physics, 1988
- Dynamical Effects in Increasing Absorption Optical Bistability of Thermal OriginPhysica Status Solidi (b), 1987
- Effects of transverse diffusion on increasing absorption bistabilityPhysical Review A, 1987
- Optical bistability in semiconductors induced by thermal effectsZeitschrift für Physik B Condensed Matter, 1986
- Structure, formation, and motion of kinks in increasing-absorption optical bistabilityPhysical Review A, 1986
- Optical bistability due to increasing absorptionOptics Letters, 1984
- Ambipolar diffusion measurements in semiconductors using nonlinear transient gratingsApplied Physics Letters, 1978
- Temperature Dependence of the Width of the Band Gap in Several PhotoconductorsPhysical Review B, 1955