Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- 1 December 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (12S) , 7103
- https://doi.org/10.1143/jjap.38.7103
Abstract
We investigated the possible use of single-layer resists in vacuum ultraviolet (VUV) lithography. The transmittances in the VUV region of commonly used polymers for photoresists were almost the same. These values were about 20% at 157 nm per 1000 Å-thickness at most. The transmittance at 157 nm of a poly (p-hydroxystyrene) (PHS)-type polymer was slightly increased by halogenation of the aromatic group. Negative working behavior was observed for PHS-type resists. It is thought that both crosslinking and deprotection occurred in PHS-type polymers. A methacrylate-type resist showed high contrast due to the photodecomposition of the base polymer and photo-deprotection in addition to acidic deprotection. It was estimated that the resolution capability of this resist was 80 nm lines and spaces (L/S) (λ157 nm, NA 0.65) using a PROLITH/3D lithography simulator with experimental dissolution data.Keywords
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