Formation of Buried Tisi2 Layers in Single Crystal Silicon by Ion Implantion
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Buried oxide formation in Si by high-dose implantation of oxygenApplied Surface Science, 1987
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Mechanisms of buried oxide formation by ion implantationApplied Physics Letters, 1987
- Localized epitaxial growth of C54 and C49 TiSi2 on (111)SiApplied Physics Letters, 1985
- Metastable phase formation in titanium-silicon thin filmsJournal of Applied Physics, 1985
- Silicon on Insulator Formed By O+ OR N+ Ion ImplantationMRS Proceedings, 1985