On the validity of the gradual-channel approximation for field-effect transistors

1 May 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 58 (5) , 841-842
https://doi.org/10.1109/PROC.1970.7778

Abstract

The valid range of the gradual-channel approximation is found in terms of the width of the conductive channel. Limitations of the approximation for the description of field-effect devices are clarified by considering the external characteristics and the internal conduction mechanism separately.

Keywords

FETS
ELECTRONS
NASA
RADIO ACCESS NETWORKS
VOLTAGE
NEODYMIUM
TIN