The Maximum Charge-Collection Contrast of a Spherical Defect or a Surface-Parallel Dislocation
- 16 January 1993
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 135 (1) , K13-K15
- https://doi.org/10.1002/pssa.2211350133
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activitySemiconductor Science and Technology, 1992
- Recombination properties of structurally well defined NiSi2 precipitates in siliconApplied Physics Letters, 1991
- Theoretical study of the temperature dependence of EBIC contrast from individual, surface-parallel dislocations in a Schottky diodePhysica Status Solidi (a), 1984