Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 737-740
• https://doi.org/10.4028/www.scientific.net/msf.338-342.737

Abstract

Keywords

• CHARGE-SHEET MODEL
• HALL-EFFECT
• INTERFACE STATES (OR TRAPS)
• INVERSION LAYER
• MOBILITY
• MOS