Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

1 February 1998

journal article
conference paper
Published by Trans Tech Publications, Ltd. in Materials Science Forum

Vol. 264-268, 89-96
https://doi.org/10.4028/www.scientific.net/msf.264-268.89

Abstract

Silicon Carbide, III-Nitrides and Related Materials: Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

Keywords

AVALANCHE BREAKDOWN
ELECTRICAL PROPERTIES
HOMOGENEITY
NUMERICAL SIMULATION
PURITY
VAPOR-PHASE EPITAXY (VPE)
VERTICAL REACTOR

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