Excimer laser ablated strontium titanate thin films for dynamic random access memory applications

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Abstract
Thin films of SrTiO3 were deposited on platinum coated silicon and bare silicon by excimer laser (248 nm) ablation at 400 and 500 °C or ex situ crystallized. Films deposited at 500 °C showed good crystallinity and were characterized for dielectric constant, dielectric loss, leakage current and C‐V characteristics. The films showed a dielectric constant of 240, a dissipation factor of 0.02, a leakage current of 2×10−9 A/cm2, and a charge storage density of 42 fC/μm2 at a bias of 5 V. The C‐V behavior of both metal‐insulator‐metal (MIM) and metal‐insulator‐ semiconductor (MIS) structures indicated bulk dielectric permittivity in the accumulation region and also good Si/SrTiO3 interfaces.