(Invited) A SIPOS-Si Heterojunction Transistor
- 1 January 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (S1)
- https://doi.org/10.7567/jjaps.20s1.75
Abstract
SIPOS (Semi-Insulating Polycrystalline Silicon) which is used as a surface passivation film has wider energy gap than Si. SIPOS doped heavily with phosphorus or boron has been used as the emitter material of a heterojunction transistor with the base and collector made of Si. An npn SIPOS-Si heterojunction transistor, showing 50 times the current gain of an npn silicon homojunction transistor with the same base Gummel number, has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas. A pnp heterojunction transistor has also been developed and the current gain is about 5 times as large as that of a pnp homojunction one.Keywords
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