Electronic properties of In0.53Ga0.47As-InP single quantum wells grown by chemical beam epitaxy
- 9 March 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (10) , 606-608
- https://doi.org/10.1063/1.98095
Abstract
In0.53Ga0.47As‐InP single quantum well (SQW) structures grown by chemical beam epitaxy (CBE) were studied using low‐field magnetotransport, the quantum Hall effect, and far‐infrared cyclotron resonance measurements at 4.2 K. We compare results on the two‐dimensional electron gas (2DEG) in the SQW’s and the single interface heterojunctions. These results confirm the high quality of the material grown by CBE and demonstrate conclusively that the use of the SQW’s for 2DEG confinement can effectively eliminate the parallel conduction often present in single interface structures.Keywords
This publication has 19 references indexed in Scilit:
- Transport in InGaAs/InP heterostructures grown by MOCVDSurface Science, 1986
- Monolithically integrated n0.53Ga0.47As/InP direct-coupled junction field-effect transistor amplifierIEEE Electron Device Letters, 1986
- First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbandsApplied Physics Letters, 1986
- Picosecond pulse generation in optically pumped, ultrashort-cavity, InGaAsP, InP, and InGaAs film lasersIEEE Journal of Quantum Electronics, 1986
- Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μmApplied Physics Letters, 1984
- Two-dimensional electron gas in a selectively doped InP/In0.53 Ga0.47As heterostructure grown by chloride transport vapor phase epitaxyApplied Physics Letters, 1983
- Chemical Etching of InP and InGaAsP / InPJournal of the Electrochemical Society, 1982
- The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 KIEEE Electron Device Letters, 1982