Significant Reduction of the Microwave Surface Resistance of MgB2 Films by Surface Ion Milling

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Abstract
The microwave surface resistance Rs of MgB2 films with the zero-resistance temperature of - 39 K was measured at 8.0 - 8.5 GHz. The MgB2 films were prepared by deposition of boron films on c-cut sapphire, followed by annealing in a vaporized magnesium environment. The Rs appeared significantly reduced by ion milling of the as-grown MgB2 film surface, with the observed Rs of ~ 0.8 mohm at 24 K for an ion-milled MgB2 film as small as 1/15 of the value for the corresponding as-grown MgB2 film. The reduced Rs of the ion-milled MgB2 films is attributed to the effects of the Mg-rich metallic layer existing at the surfaces of the as-grown MgB2 films.

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