Improved gain block for long wavelength (1.55 µm)hybrid integrated devices
- 12 November 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (23) , 2247-2249
- https://doi.org/10.1049/el:19981557
Abstract
A curved waveguide, strained multiple quantum well reflective amplifier with an integrated front facet mode expander has been designed and fabricated. A device without facet coatings has been found to have a chip gain of 36 dB with 6 dB of gain ripple. This equates to an effective facet reflectivity of 8 × 10–6.Keywords
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