The behavior of oxygen in HgCdTe
- 1 January 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 3 (1) , 153-155
- https://doi.org/10.1116/1.573189
Abstract
The behavior of oxygen in HgCdTe has been studied using a liquid phase epitaxial growth technique. The oxygen has been found to act as a donor impurity in Hg0.7Cd0.3Te. High‐purity Hg0.7Cd0.3Te crystals with carrier concentration of less than 5×1013 cm−3 can be obtained reproducibly by complete deoxidization of the growth solution. As a result, carrier concentration can be controlled accurately within ±1×1014 cm−3.Keywords
This publication has 0 references indexed in Scilit: