Barium titanate thin-film humidity sensitive capacitor

Abstract
A humidity-sensitive capacitor using thin films of BaTiO3 have been successfully deposited on silicon substrates by rf sputtering in an O2/Ar atmosphere. The capacitance of these devices are sensitive to changes in relative humidity, substrate temperature, and postdeposition annealing temperature. Typically, a 300% increase was observed when the relative humidity (RH) was changed from 27 to 90% at a testing frequency of 1 MHz. The capacitance–voltage, current–voltage, and the temperature and frequency effects on the sensor characteristics are presented.
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