Materials specification for MCM-D decoupling capacitors using PZ, PZT, PLZT and BST dielectrics
- 1 September 1997
- journal article
- dielectric properties-and-applications
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 17 (1-4) , 205-212
- https://doi.org/10.1080/10584589708012995
Abstract
The desired electrical properties of decoupling capacitors for use in an existing MCM-D process have been defined. Two types of dielectric have been investigated, sol-gel deposited P(L)ZT and dual ion beam sputtered (DIBS) BST. Their electrical properties have been measured and compared against this target. Decoupling capacitors have been fabricated and integrated with an MCM-D process, the resulting processing issues are discussed.Keywords
This publication has 2 references indexed in Scilit:
- Control of Leakage Resistance in Pb(Zr,Ti)O3 Thin Films by Donor DopingJournal of the American Ceramic Society, 1994
- Piezoelectric CeramicsPublished by Elsevier ,1971