Random Bethe lattice approach to the mobility edges of hydrogenated and flourinated amorphous silicon
- 1 October 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 60 (2) , 157-160
- https://doi.org/10.1016/0038-1098(86)90550-8
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Optical absorption and photoluminescence of glow-discharge amorphous Si:F filmsPhysical Review B, 1985
- Bethe Lattices Incorporating Short-Range Disorder: Application to Hydrogenated Amorphous SiliconPhysical Review Letters, 1984
- Absolute Hydrostatic Deformation Potentials of Tetrahedral SemiconductorsPhysica Status Solidi (b), 1982
- Exact Solution of a Model of LocalizationPhysical Review Letters, 1982
- States in the gap in non-crystalline semiconductorsJournal of Physics C: Solid State Physics, 1980
- Dynamical electron-phonon interaction and conductivity in strongly disordered metal alloysPhysical Review B, 1980
- Electron-Phonon Dynamics and Transport Anomalies in Random Metal AlloysPhysical Review Letters, 1979
- Electron states at planar and stepped semiconductor surfacesPhysical Review B, 1977
- Self-consistent approach to alloys exhibiting partial orderPhysical Review B, 1977
- Self-consistent theory of localization. II. Localization near the band edgesJournal of Physics C: Solid State Physics, 1974