Size-dependent output power saturation of vertical-cavity surface-emitting laser diodes
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (1) , 10-12
- https://doi.org/10.1109/68.475761
Abstract
We demonstrate efficient vertical-cavity surface-emitting laser diodes with high output power levels. Improved output power in these pillar-etched devices is achieved through a 60% lower thermal resistance by using a 15-/spl mu/m-thick Au-plated heat spreading layer on the top surface with a size of 300/spl times/300 /spl mu/m/sup 2/. The maximum continous wave output power increases almost linearly with laser diameter, before it saturates at 42 mW for an unmounted Au-plated device of 64-/spl mu/m diameter. A simple analytical model describes the laser output characteristics and the size-dependent saturation behavior of the maximum output power.Keywords
This publication has 6 references indexed in Scilit:
- Producible GaAs-based MOVPE-grown vertical-cavitytop-surfaceemitting lasers with record performanceElectronics Letters, 1995
- Improved performance of vertical-cavity surface-emittinglaser diodes with Au-plated heat spreading layerElectronics Letters, 1995
- 17.3% peak wall plug efficiency vertical-cavity surface-emitting lasers using lower barrier mirrorsIEEE Photonics Technology Letters, 1994
- Tunable extremely low threshold vertical-cavity laser diodesIEEE Photonics Technology Letters, 1993
- High-power vertical-cavity surface-emitting lasersElectronics Letters, 1993
- Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arraysElectronics Letters, 1992