Optical study of the stoichiometry-dependent electronic structure of TiCx, VCx, and NbCx

Abstract
The stoichiometry-dependent bulk electronic structure has been studied by optical spectroscopy for single crystals of TiCx with x=0.95 and 0.70, VCx with x=0.86 and 0.76, and NbCx with x=0.93, 0.84, and 0.71. The reflectance was measured in the energy range 0.5–40 eV for all of the samples and up to 100 eV for TiC0.95, VC0.86, and NbC0.93. By correcting for the surface-roughness effect using the measured roughness values, the data were Kramers-Kronig analyzed to obtain the dielectric function and related functions. The observed interband transitions have been interpreted on the basis of existing calculations for the energy-band structure and partial density of states. The main peaks above 4 eV were assigned to transitions at and around the X and Q portions in the Brillouin zone. Their shifts to lower energy and reduced intensities with decreasing carbon concentration are discussed in terms of p-d hybridization. Features arising from transitions involving the initial or final states near the Fermi level were observed in the low-energy region.