100GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology using 250nm InP DHBTs and 130nm CMOS
- 1 October 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 15508781,p. 1-4
- https://doi.org/10.1109/csics.2008.53
Abstract
Differential amplifiers incorporating the advantages of both Si and III-V technologies have been fabricated in a wafer scale, heterogeneously integrated, process using both 250 nm InP DHBTs and 130 nm CMOS. These ICs demonstrated gain- bandwidth product of 40-130 GHz and low frequency gain >45 dB. The use of InP DHBTs supports a 6.9 V differential output swing and a slew rate >4times104 V/mus to be achieved with as low as 40 mW dissipated power. A novel on-chip buffer circuit is used to facilitate the on-wafer characterization of these amplifiers. To the authors' knowledge, this is the first demonstration of a high performance IC building block in a heterogeneously integrated process technology.This publication has 4 references indexed in Scilit:
- Heterogeneous wafer-scale integration of 250nm, 300GHz InP DHBTs with a 130nm RF-CMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Fabrication of InP HEMT devices with extremely high FmaxPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Transistor Level Integration of Compound Semiconductor Devices and CMOS (CoSMOSMRS Proceedings, 2008
- Strained ultrahigh performance fully depleted nMOSFETs with f/sub t/ of 330 GHz and sub-30-nm gate lengthsIEEE Electron Device Letters, 2006