SEMM-2: a modeling system for single event upset analysis

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Abstract
We describe SEMM-2, a new simulation system for the analysis of radiation-induced single event upsets which builds on the initial SEMM tool. Developed for the current and future CMOS technologies, SEMM-2 improves the generation of radiation events. The atomic databases which describe ion energy loss with transport through device materials are generalized. Enhancements of the nuclear collision event generation include more accurate and efficient methods for generating elastic events and more thorough treatment of inelastic processes. We present illustrative simulations where more accurately accounting for the metallization layers significantly impacts the simulated single event failure rate.