Electronic transport properties of polycrystalline silicon films deposited on ceramic substrates
- 15 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 544-548
- https://doi.org/10.1016/s0921-4526(99)00569-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Crystalline silicon thin films: A promising approach for photovoltaics?Journal of Materials Research, 1998
- Analysis of thin film polysilicon on graphite substrates deposited in a thermal CVD systemJournal of Crystal Growth, 1998
- Effect of grain size and dislocation density on the performance of thin film polycrystalline silicon solar cellsJournal of Applied Physics, 1997
- Silicon thin films obtained by rapid thermal atmospheric pressure chemical vapour depositionMaterials Science and Engineering: B, 1996
- Polycrystalline Silicon-Film™ Thin-film Solar Cells: Advanced ProductsProgress In Photovoltaics, 1995
- Theory of the electrical and photovoltaic properties of polycrystalline siliconJournal of Applied Physics, 1980
- The Influence of Grain Size and Dopant Concentration on the Electrical Properties of Polycrystalline Silicon FilmsPublished by Springer Nature ,1979
- Electronic processes at grain boundaries in polycrystalline semiconductors under optical illuminationIEEE Transactions on Electron Devices, 1977
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975