Saturation of photovoltage and photocurrent in p-n junction solar cells
- 1 May 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (5) , 504-507
- https://doi.org/10.1109/t-ed.1976.18436
Abstract
Expressions for the photovoltage and photocurrent of a strongly illuminated p-n junction solar cell are derived by solving the ambipolar diffusion equation. A complete boundary condition is derived for the junction, which is valid for all levels of injection. In the open-circuit case, results are in agreement with those given by earlier theories, while in the short-circuit case, the current is found to saturate at the ratio of the diffusion potential to the internal resistance. Results are used to explain the experimental results of earlier workers.Keywords
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