Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror

• 3 March 1983
• journal article
• Published by Institution of Engineering and Technology (IET) in Electronics Letters
• Vol. 19  (5) , 169-171
• https://doi.org/10.1049/el:19830118

Abstract

Keywords

• LASER DIODE
• PHASE LOCKED LASER
• LOW REFLECTIVE FRONT FACET COATING
• ROOM TEMPERATURE OPERATION
• SINGLE MIRROR
• GAALAS
• III-V SEMICONDUCTOR
• MULTIPLE QUANTUM WELL LASER
• POWER OUTPUT 2.6 W CW
• HIGHLY REFLECTIVE REAR FACET COATING
• WAVELENGTH 836.5 NM
• SEMICONDUCTOR LASER ARRAYS
• MQW LASER