Evidence for the defect origin of states which control photoelectronic behavior of amorphous chalcogenides
- 1 July 1984
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 66 (1-2) , 315-320
- https://doi.org/10.1016/0022-3093(84)90338-7
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Photoenhanced metastable deep trapping in amorphous chalcogenides near room temperaturePhysical Review B, 1983
- Xerographic spectroscopy of gap states in amorphous semiconductorsPhysical Review B, 1982
- Defect chemistry of lone-pair semiconductorsPhilosophical Magazine Part B, 1978
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976