The production of EFG sapphire ribbon for heteroepitaxial silicon substrates
- 1 September 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (1) , 143-150
- https://doi.org/10.1016/0022-0248(80)90239-0
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Interface Growth Feature and Voids in Sapphire Ribbon CrystalsJapanese Journal of Applied Physics, 1978
- Edge-defined, film-fed crystal growthJournal of Crystal Growth, 1972
- Growth of controlled profile crystals from the melt: Part III — TheoryMaterials Research Bulletin, 1971
- Growth of controlled profile crystals from the melt: Part II - Edge-defined, film-fed growth (EFG)Materials Research Bulletin, 1971
- Growth of controlled profile crystals from the melt: Part I - Sapphire filamentsMaterials Research Bulletin, 1971